Slkor SACoMicro -SL12010B silicon carbide Schottky diode
Product classification：【Slkor】
Function overview：
1.2kV 28A 1.56V@10A Schottky diode
Model: SL12010B
Brand: Slkor (Sakewei)
Package: TO-220-2
?
Description: diode configuration: independent DC reverse withstand voltage (VR): 1.2kV average rectified current (IO): 28a forward voltage drop (VF): 1.56V @ 10a reverse current (IR): 2.5UA @ 1.2kV.
?
Silicon carbide Schottky diode is a kind of metal semiconductor device, which is made by rectifying the contact barrier between metal and N-type semiconductor. The basic structure of Schottky diode is heavily doped N-type 4H-SiC wafer, 4H-SiC epitaxial layer, Schottky contact layer and ohmic contact layer. Silicon carbide SBD makes up for the deficiency of silicon SBD. Many metals, such as nickel, gold, palladium, titanium and cobalt, can form Schottky contact with silicon carbide, and the height of Schottky barrier is above 1 eV. The barrier height of Au/4H-SiC contact can reach 1.73 eV, while that of Ti/4H-SiC contact is relatively low, but the highest barrier can also reach 1.1 eV. The height of Schottky barrier between 6H-SiC and various metals varies greatly, ranging from 0.5 eV to 1.7 eV.